Application of scanning electron microscopy to determination of surface recombination velocity: GaAs
作者:
L. Jastrzebski,
J. Lagowski,
H. C. Gatos,
期刊:
Applied Physics Letters
(AIP Available online 1975)
卷期:
Volume 27,
issue 10
页码: 537-539
ISSN:0003-6951
年代: 1975
DOI:10.1063/1.88276
出版商: AIP
数据来源: AIP
摘要:
A method is reported for the determination of the surface recombination velocity by scanning electron microscopy; this method is based on an established relationship between the effective diffusion length of the minority carriers, the penetration depth of the electron beam, and the surface recombination velocity. Values of surface recombination velocity, up to about 2.5×106cm/sec were determined inn‐type GaAs with a bulk minority‐carrier lifetime of the order of 10−8–10−10sec; in GaAs, with carrier concentrations exceeding 1018cm−3, recombination velocity of about 3×106cm/sec represents a saturation value.
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