Platinum silicide junction spiking in arsenic doped polysilicon transistors
作者:
Gordon Grivna,
Jim Kirchgessner,
Jack Carlson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 1
页码: 53-59
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586388
出版商: American Vacuum Society
关键词: PLATINUM SILICIDES;PLATINUM;ARSENIC ADDITIONS;BIPOLAR TRANSISTORS;WAFERS;LEAKAGE CURRENT;SINTERING;PtSi;Si:As
数据来源: AIP
摘要:
Polysilicon emitter bipolarnpntransistors, silicided with platinum, exhibited emitter‐base leakage after the final passivation thermal cycle. Transmission electron microscopy studies revealed platinum silicide (PtSi) spiking through the polysilicon into the emitter‐base region, indicating an apparent release of Pt during high temperature (>400 °C) processing. A technique was developed to study the phenomenon using unpatterned monitor wafers. Observations from a series of tests indicate arsenic dose, Pt thickness, Pt sinter temperature, PtSi capping material, postsilicide formation temperatures, and exposure to oxygen during high temperature treatments (after silicide formation) as the major factors influencing PtSi spiking.
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