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Far‐infrared detection using photoconductivity of negative donor ion states in silicon

 

作者: P. Norton,   R. E. Slusher,   M. D. Sturge,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 9  

页码: 446-448

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89446

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Far‐infrared detection using the bulk photoconductivity associated with negative donor ion states in silicon is found to provide nanosecond response times and quantum efficiencies of a few percent. It is estimated that this detector can be used in a heterodyne receiver with NEP’s in the range from 10−16to 10−19W/Hz in the wavelength range from 100 to 500 &mgr;m.

 

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