Spontaneous change of growth orientation of In0.5Ga0.5P/GaAs superlattices in molecular beam epitaxy
作者:
Y. Nakamura,
K. Mahalingam,
N. Otsuka,
H. Y. Lee,
M. J. Hafich,
G. Y. Robinson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 4
页码: 2445-2449
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585718
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;INDIUM PHOSPHIDES;GALLIUM PHOSPHIDES;QUASI−BINARY COMPOUNDS;SUPERLATTICES;MOLECULAR BEAM EPITAXY;FILM GROWTH;ORIENTATION;TEMPERATURE DEPENDENCE;InGaP;GaAs
数据来源: AIP
摘要:
The spontaneous change of growth orientation during the molecular beam epitaxy of In0.5Ga0.5P/GaAs superlattices is investigated as a function of the growth temperature by cross‐sectional transmission electron microscopy. It is observed that there exists a critical temperature above which a change in growth orientation from 〈100〉 to 〈311〉 occurs and is characterized by the evolution of V‐shaped grooves with {311} facets. Further increase in the temperature enhances the evolution of the {311} facets. It is found that the formation of the V‐shaped grooves is along the [01̄1] direction and that the most critical stage for the change in orientation is the interruption after the growth of the GaAs layer with P2flux. Based on these observations the atomic arrangement on a stable (311) surface resulting from the spontaneous change of the growth orientation is discussed.
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