Cathodoluminescence scanning electron microscopy of semiconductors
作者:
B. G. Yacobi,
D. B. Holt,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 4
页码: 1-24
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.336491
出版商: AIP
数据来源: AIP
摘要:
This paper reviews applications of cathodoluminescence scanning electron microscopy in the assessment of optical and electronic properties of semiconductors. The assessment includes, for example, information on band structure and impurity levels derived from spectroscopic cathodoluminescence, analysis of dopant concentrations at a level which is in some cases several orders of magnitude better than x‐ray microanalysis, and mapping of carrier lifetimes and defects. Recent advances in both the various cathodoluminescence techniques and the processes leading to electron‐beam‐induced luminescence in semiconductors are reviewed. Possible future trends are also discussed.
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