A magnetic field‐effect transistor
作者:
J. Mannhart,
R. P. Huebener,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 5
页码: 1829-1831
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337225
出版商: AIP
数据来源: AIP
摘要:
The magnetic control of the filamentary current flow during avalanche breakdown in a semiconductor at low temperatures represents an interesting new principle of a magnetic field‐effect transistor. The power losses in such a device are minimized by using superconducting lines for the generation of the magnetic control field and for the interconnections. For such a hybrid concept, implementing semiconducting and superconducting components, the important performance characteristics are evaluated.
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