Junctions of CuInSe2/CdS have been investigated using an admittance spectroscopy technique to obtain information on electrically active states in CuInSe2. The junctions studied were fabricated using electrodepositedp‐type CuInSe2films. The admittance experiments were carried out over a temperature range from 80 to 300 K with a frequency range from 1 to 100 kHz. In devices fabricated using CuInSe2films with an In/Cu ratio of 1.10, peaks were observed in the conductance‐temperature curves with an activation energy of about 50 meV. Characteristic peaks with an activation energy of about 160 meV were found in the devices fabricated using CuInSe2films with an In/Cu ratio of about 1.25.