Schottky‐barrier characteristics of metal–amorphous‐silicon diodes
作者:
C. R. Wronski,
D. E. Carlson,
R. E. Daniel,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 9
页码: 602-605
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.89158
出版商: AIP
数据来源: AIP
摘要:
Metal–amorphous‐silicon Schottky barriers, similar to those used in thin‐film amorphous‐silicon solar cells, exhibit nearly ideal diode behavior in the dark. The current‐voltage characteristics have been studied in the range from 270 to 370 °K and are found to be in agreement with the diffusion theory of metal‐semiconductor rectification. Barrier heights, which were measured by two different methods, depend on the metal work function, and barriers as high as ∼1.1 eV are obtained with Pt films.
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