Remote plasma chemical vapor deposition of copper for applications in microelectronics
作者:
Hongwen Li,
Eric T. Eisenbraun,
Alain E. Kaloyeros,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 4
页码: 1337-1340
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.585865
出版商: American Vacuum Society
关键词: CHEMICAL VAPOR DEPOSITION;COPPER;MICROELECTRONICS;THIN FILMS;SCANNING ELECTRON MICROSCOPY
数据来源: AIP
摘要:
High‐quality copper films were deposited from the β‐diketonate precursor copper(II) (hexafluoroacetylacetonato), Cu(hfa2), using a remote plasma chemical vapor deposition (RPCVD) process which allows the delivery to the reaction zone of the reactive hydrogen species (mostly atomic and ionic hydrogen) needed for precursor reduction while avoiding plasma‐induced substrate damage. The RPCVD process was employed to grow copper films at temperatures in the range 150–250 °C at a reactor pressure and plasma power of, respectively, 0.5–2 Torr and 75–100 W (power density of 1.5–2.2 W/cm2), with an average copper growth rate of 50–75 Å/min. Films thus grown were analyzed by x‐ray diffraction, Rutherford backscattering, x‐ray photoelectron spectroscopy, four‐point resistivity probe, and scanning electron microscopy. The results of these studies showed that the films were pure (impurity levels were below the detection limits of the techniques used), uniform, continuous, and had resistivity values under 2.0 μΩ cm.
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