A Si single‐electron transistor (SET) with satellite Si islands has been fabricated by pattern‐dependent oxidation of cross‐shaped Si wires on a separation by implanted oxygen (SIMOX) substrate. The oscillatory conductance‐versus‐gate voltage characteristics of the SET show hysteresis as a result of abrupt jumps in the conductance at high temperatures around 30 K. This phenomenon is attributed to the memory effect of a single electron that tunnels between the SET Si island and the satellite Si islands. Time‐resolved measurements have clarified that the conductance jump is a Poisson process, which is clear evidence of the single‐electron tunneling between the Si islands. ©1995 American Institute of Physics.