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Clean GaP(001)‐(4×2) and H2S‐treated (1×2)S surface structures studied by scanning tunneling microscopy

 

作者: N. Sanada,   M. Shimomura,   Y. Fukuda,   T. Sato,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 67, issue 10  

页码: 1432-1434

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114517

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Clean GaP(001)‐(4×2) and H2S‐treated (1×2) surfaces are studied by scanning tunneling microscopy (STM). We have observed a (4×2)/c(8×2) STM image for the cation‐stabilized GaP(001) surface. The result suggests that the unit cell of the (4×2) structure consists of two Ga dimers with two missing Ga dimers. For the (1×2)S surface, the previous model that sulfur atoms are adsorbed on the Ga dimer and that a missing row of sulfur is formed along the [11¯0] direction is supported by the STM result. ©1995 American Institute of Physics.

 

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