Clean GaP(001)‐(4×2) and H2S‐treated (1×2)S surface structures studied by scanning tunneling microscopy
作者:
N. Sanada,
M. Shimomura,
Y. Fukuda,
T. Sato,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 10
页码: 1432-1434
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114517
出版商: AIP
数据来源: AIP
摘要:
Clean GaP(001)‐(4×2) and H2S‐treated (1×2) surfaces are studied by scanning tunneling microscopy (STM). We have observed a (4×2)/c(8×2) STM image for the cation‐stabilized GaP(001) surface. The result suggests that the unit cell of the (4×2) structure consists of two Ga dimers with two missing Ga dimers. For the (1×2)S surface, the previous model that sulfur atoms are adsorbed on the Ga dimer and that a missing row of sulfur is formed along the [11¯0] direction is supported by the STM result. ©1995 American Institute of Physics.
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