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Conductivity changes in Ni films on Si(111) following compound formation during annealing

 

作者: R. Schad,   F. Jentzsch,   M. Henzler,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 3  

页码: 1177-1180

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585882

 

出版商: American Vacuum Society

 

关键词: ANNEALING;NICKEL;THIN FILMS;NICKEL SILICIDES;ELECTRIC CONDUCTIVITY;TEMPERATURE DEPENDENCE;STOICHIOMETRY;ULTRAHIGH VACUUM;HALL EFFECT;VACUUM COATING

 

数据来源: AIP

 

摘要:

The sheet conductance of Ni films deposited onto clean Si(111) substrates has been measured during deposition and after stepwise annealing. Hall effect, surface composition, and surface order have also been monitored. The dependence of compound formation on film thickness and temperature has been studied. It is shown that each silicide has a characteristic bulk conductivity and that the influence of surface scattering is small even for very thin films (≳1 nm).

 

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