The continuing trend toward smaller geometries and thinner junctions mandates that interconnect and gate materials have the lowest resistivity possible. Titanium silicide has the lowest resistivity of the refractory metal silicides and is, therefore, the prime candidate for advanced VLSI processing. This paper describes the CVD of titanium silicide in the ASM PECVD system. Reactor characteristics, deposition uniformities, and properties of the as‐deposited and annealed films are discussed. Film resistivity, after a 10 min anneal at 650 °C, is typically 15 to 20 μΩ cm. This result is obtained at a lower temperature (by about 100 °C) and lower resistivity (by about 25%) than is usually attainable with sputter‐deposited TiSix. Analysis using Rutherford backscattering spectrometry and Auger electron spectroscopy also indicates considerably better purity with these PECVD films. The step coverage of CVD TiSixis essentially conformal.