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Electrical properties of blue/green diode lasers

 

作者: Y. Fan,   D. C. Grillo,   M. D. Ringle,   J. Han,   L. He,   R. L. Gunshor,   A. Salokatve,   H. Jeon,   M. Hovinen,   A. V. Nurmikko,   G. C. Hua,   N. Otsuka,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 4  

页码: 2480-2483

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587788

 

出版商: American Vacuum Society

 

关键词: LASER DIODES;QUATERNARY COMPOUNDS;HETEROSTRUCTURES;ZINC COMPOUNDS;CADMIUM COMPOUNDS;MAGNESIUM COMPOUNDS;SULFIDES;SELENIDES;TELLURIDES;OHMIC CONTACTS;HALL EFFECT;TEMPERATURE EFFECTS;NITROGEN ADDITIONS;Zn(S,Se):N;(Zn,Cd)Se;ZnTe

 

数据来源: AIP

 

摘要:

In this paper we report the implementation of low resistance ohmic contacts top‐type ZnSSe and ZnMgSSe which involves the injection of holes from heavily doped ZnTe into an adjacent alloy layer(s) via graded band gap regions. Temperature‐dependent Hall effect measurements on nitrogen‐doped Zn(S,Se) and (Zn,Mg)(S,Se) were performed and the activation energy of nitrogen acceptors was obtained. With the use of this graded contact, room‐temperature continuous‐wave laser diode operation has been achieved at a threshold voltage of 5.8 V in a ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure.

 

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