Glass‐coated bismuth films were deposited onto a glass substrate at room temperature and their Hall coefficients and electrical resistivities were measured between 77 and 300°K. Scanning electron micrographs revealed that the films prepared in this way were more polycrystalline than those deposited onto a heated mica substrate. Interesting features were found in the temperature dependence of the Hall coefficient: the thinner films with thicknesst<500 Å wereptype at higher temperatures and becamentype below a critical temperatureTc, whereTcincreased with the increase int, whereas the thicker ones witht>500 Å were alwaysntype over the temperature ranges studied. Hall mobility and magnetoresistance data are also presented here and the experimental results are discussed qualitatively.