X‐ray photoelectron spectroscopy on surface oxidation of silicon by some cleaning procedures
作者:
C. Y. Wong,
S. P. Klepner,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 18
页码: 1229-1230
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96990
出版商: AIP
数据来源: AIP
摘要:
X‐ray photoelectron spectroscopy was used to analyze silicon surfaces after some standard cleaning procedures. Buffered hydrofluoric acid (BHF), RCA clean, and back door etch (BDE) result in less than one monolayer of suboxide coverage. RCA clean without BHF, heat treatment in nitrogen ambience, and prolonged explosure to air at room temperature all result in thicker self‐passivating suboxides. Wafers with arsenic ion implantation yield thicker oxides even immediately after BHF or BDE clean. Arsenic ion implantation also causes an additional chemical shift of 0.3 eV on the Si 2ppeak. The possible causes for these observations are discussed.
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