Schottky barrier junctions of PtSi/Si1−xGexwere produced; the silicide was deposited by co-sputtering on defect-free well-calibrated strained-Si1−xGex(0⩽x⩽0.242)layers. This work is motivated by the fact that it is very difficult to control the formation of well-defined and well-controlled PtSi/Si1−xGexjunctions by reactingPt/Si1−xGexor by using a silicon cap layer. The Schottky barrier heights of these junctions were substantially lower than those ofPtSi/Sijunctions. Different characterization tools were employed for structural characterization. High-resolution multicrystal x-ray diffraction (HR-MCXRD) was used to investigate the sample quality and strain state of the molecular beam epitaxy (MBE) grownSi1−xGexlayers and to accurately determine the Ge fraction in the fabricated junctions. Cross-sectional transmission electron microscopy (XTEM) was applied to investigate the interface roughness. The possible interlayer diffusion was investigated by secondary ion mass spectrometry (SIMS). The variation of the barrier height of the junctions with the Ge fractionxwas studied, and it was found to follow the same change as the band gap of strained-Si1−xGex.Also, and for comparison,Pt/p-Si1−xGexjunctions were produced, and the effect of annealing on electrical characteristics was investigated.