Strong polarization selectivity in 780-nm vertical-cavity surface-emitting lasers grown on misoriented substrates
作者:
Young-Gu Ju,
Yong-Hee Lee,
Hyun-Kuk Shin,
Il Kim,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 6
页码: 741-743
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119631
出版商: AIP
数据来源: AIP
摘要:
We report that the 780 nm quantum well vertical-cavity surface-emitting lasers (VCSELs) grown on a 2° off misoriented (001) substrate toward (111)A exhibit a high polarization suppression ratio over a few hundred. The main polarization is always along the[−110]direction for all the lasers over the entire operating currents. To understand the physical origin of this polarization selectivity, the gain/loss difference between two competing polarization modes in VCSELs is investigated by measuring the subthreshold spectral linewidth. The obtained modal gain/loss difference is about3.0 cm−1,which is sufficiently large for polarization stabilization and amounts to 4&percent; of the threshold modal gain. Comparison with the subthreshold measurement and previous theoretical work shows significant discrepancy, which implies the possibility of other polarization selection mechanisms inducing such large gain/loss differences in 780 nm quantum wells grown on a misoriented substrate. In addition, it is found that the 780 nm VCSEL made of a bulk active medium grown on a misoriented substrate also shows a high polarization selectivity as quantum well lasers. ©1997 American Institute of Physics.
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