Study of Ge bonding and distribution in plasma oxides ofSi1−xGexalloys
作者:
M. Seck,
R. A. B. Devine,
C. Hernandez,
Y. Campidelli,
J.-C. Dupuy,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 21
页码: 2748-2750
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121078
出版商: AIP
数据来源: AIP
摘要:
Secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) absorption have been studied in thin oxides ofSi1−xGexgrown by plasma oxidation. SIMS analysis reveals that Ge can migrate to the oxide film surface leaving the oxide in the SiGe interface region Ge-depleted. This is in contrast to thermally grown oxides. Water selectively attacks the Ge-rich part of the oxide. In the FTIR spectra of the SiGe oxides, specific peaks identified with the vibration of O in Si–O–Ge and Ge–O–Ge bonds have been observed for the first time. These latter observations confirm that for the plasma oxidized films, the Ge is chemically bonded in the oxide network. ©1998 American Institute of Physics.
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