We report the discovery that the [111] strained Si (∼10 Å) as an interlayer betweenSi3N4and (111) GaAs may allow the Fermi level to fully scan the GaAs conduction band and induce inversion electrons in GaAs. The band structure calculations indicate that the strained Si on (111) GaAs or (111) AlGaAs has a much wider band gap (0.87 eV) than the strained Si on (001) GaAs (0.34 eV). The energy levels in the quantum well formed bySi3N4/Si/(111)GaAsare almost unconfined and those ofSi3N4/Si/Al0.3Ga0.7As/(111)GaAsare confined, but the confined energy level in Si conduction band is ∼0.1 eV higher than the GaAs conduction band. Both structures may induce inversion electrons in GaAs potentially paving the way for the realization of GaAs basedn-channel inversion mode metal-insulator-semiconductor transistors. ©1997 American Institute of Physics.