Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposedAl/n-SiSchottky diodes
作者:
Tsukasa Kuroda,
Zhangda Lin,
Hiroaki Iwakuro,
Shinji Sato,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 2
页码: 232-236
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589270
出版商: American Vacuum Society
关键词: CURRENT DENSITY;FOWLER-NORDHEIM THEORY
数据来源: AIP
摘要:
The influence of plasma exposure at self-bias voltages less than 200 V on electrical characteristics ofAl/n-Sidiodes was examined. In particular, the influence of chemical cleaning on the electrical characteristics of plasma-exposed diodes was examined. In Ar,N2,andO2plasma exposure followed by postcleaning, the electrical characteristics were the same as that of a nonplasma-exposed diode. The postcleaning treatment removed the damage layer formed during plasma exposure. On the other hand, in the diodes exposed toH2andH2-containing plasma followed by the postcleaning treatment, the electrical characteristics was not improved by the postcleaning treatment: the Schottky barrier height increased. The H-incorporated zone was not removed by the postcleaning treatment.
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