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Electronic transitions in a SimGenstrained monolayer superlattice measured by photoreflectance

 

作者: P. A. Dafesh,   V. Arbet,   K. L. Wang,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 56, issue 15  

页码: 1498-1500

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103158

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The first photoreflectance spectrum from a short‐period strain‐symmetrized SimGensuperlattice has been measured at 87 K. Fifteen electronic transitions were measured between 1.1 and 2.7 eV and fit well to a third derivative functional form. Most of the transition energies were calculated using a one‐band envelope‐function model, adding strain and spin orbit shifts as first‐order corrections. Additional transitions were observed near the expected interband energies in an unstrained Si0.2Ge0.8random alloy. All of the calculated transition energies were found to agree to within 80 meV of the measured values.

 

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