Electronic transitions in a SimGenstrained monolayer superlattice measured by photoreflectance
作者:
P. A. Dafesh,
V. Arbet,
K. L. Wang,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 15
页码: 1498-1500
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103158
出版商: AIP
数据来源: AIP
摘要:
The first photoreflectance spectrum from a short‐period strain‐symmetrized SimGensuperlattice has been measured at 87 K. Fifteen electronic transitions were measured between 1.1 and 2.7 eV and fit well to a third derivative functional form. Most of the transition energies were calculated using a one‐band envelope‐function model, adding strain and spin orbit shifts as first‐order corrections. Additional transitions were observed near the expected interband energies in an unstrained Si0.2Ge0.8random alloy. All of the calculated transition energies were found to agree to within 80 meV of the measured values.
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