Growth of PZT thin films with large area was performed in a 6–8 inch single wafer type MOCVD system, using Pb(DPM)2(solid), (C2H5)3Pb[OCH2C(CH3)3] (liquid), Zr(O-t-C4H9)4(liquid), Ti(O-i-C3H7)4(liquid) and O2. When Pb(DPM)2was used, highly uniform PZT films with a spatial variation in film thickness of less than ±5.0% were grown on 6 and 8 inch Si wafers. However, the reproducibility of the film composition and electrical properties was quite poor. On the other hand, when (C2H5)3Pb[OCH2C(CH3)3] (Tri Ethyl neoPentOxy Lead, TEneoPOL)was used, the reproducibility of the film composition was quite good. Uniform films with spatial variations in the Pb, Zr and Ti components of less than ±1.1% and in the film thickness, refractive index and dielectric constant of respectively less than ±1.5%, ±4.1% and ±5.1% were successfully grown on a 6 inch Si wafer. The temporal variation of the film thickness, that is, the growth rate with the film growth run is less than ±1.5%. The ferroelectric hysteresis curve was observed throughout the film. The values of 2Pr and (Ec+-Ec-)/2 were 18.5μC/cm2(±16.9%) and 107kV/cm (±21.7%) in a particular PZT thin film on a 6 inch wafer, where the dielectric constant had also a rather high spatial deviation as ±18.1%