Very high speed GaInAs metal‐semiconductor‐metal photodiode incorporating an AlInAs/GaInAs graded superlattice
作者:
O. Wada,
H. Nobuhara,
H. Hamaguchi,
T. Mikawa,
A. Tackeuchi,
T. Fujii,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 1
页码: 16-17
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100822
出版商: AIP
数据来源: AIP
摘要:
A lateral structure metal‐semiconductor‐metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 &mgr;m, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro‐optic sampling to exhibit a full width at half maximum of 14.7 ps.
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