Boron bulk doped p-type (111) silicon thin wafers or different resistivities (1 − 100 ohm-cm ± 20%) have been analysed for boron using cellulose nitrate- Daicel and red dyed LR-115 tvpe II films as detectors of alpha particles from 10B(n,α)7Li reaction. The two detectors measure the same value of boron (∼0.1 ppm) in 1 ohm-cm silicon samples and agree closely with the four-point probe electrical resistivity measurement results whereas large discrepancies are observed in case of samples with resistivity >1 ohm-cm (B concent rat ion <0.1ppm) between the electrical measurements and the results obtained from the present technique. Also the results shown by the two types of detectors differ very much in case of samples with resistlvity>1 ohm-cm.