Exposure to a hydrogen plasma at 250 °C ofp‐type GaN (Ca) prepared by either Ca+or Ca+plus P+co‐implantation leads to a reduction in sheet carrier density of approximately an order of magnitude (1.6×1012cm−2to 1.8×1011cm−2), and an accompanying increase in hole mobility (6 cm2/V s to 18 cm2/V s). The passivation process can be reversed by posthydrogenation annealing at 400–500 °C under a N2ambient. This reactivation of the acceptors is characteristic of the formation of neutral (Ca–H) complexes in the GaN. The thermal stability of the passivation is similar to that of Mg–H complexes in material prepared in the same manner (implantation) with similar initial doping levels. Hydrogen passivation of acceptor dopants in GaN appears to be a ubiquitous phenomenon, as it is in otherp‐type semiconductors. ©1996 American Institute of Physics.