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Dependence of electrical characteristics of MBE Ga0.47In0.53As planar doped barriers on InP substrates

 

作者: A. S. Brown,   S. C. Palmateer,   G. W. Wicks,   L. F. Eastman,   A. R. Calawa,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 194-196

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582777

 

出版商: American Vacuum Society

 

关键词: semiconductor diodes;gallium arsenides;indium arsenides;molecular beam epitaxy;electric fields;electrical properties;potential barrier;barrier height;energy gap;carrier density;annealing;impurities

 

数据来源: AIP

 

摘要:

The potential barrier height in planar‐doped barrier structures is particularly sensitive to the concentration of background impurities present in the nominally undoped regions. MBE grown GaInAs lattice matched to InP typically hasn‐type background carrier concentrations in the 1016cm−3range. This high level can cause lowering of the barrier to near zero. By subjecting the InP substrates to a heat treatment process before growth in order to inhibit impurity outdiffusion higher purity GaInAs can be grown and planar‐doped barrier devices with more reproducible characteristics are expected.

 

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