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Thin film interactions of Al and Al(Cu) on TiW

 

作者: C. J. Palmstro&slash;m,   J. W. Mayer,   B. Cunningham,   D. R. Campbell,   P. A. Totta,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 58, issue 9  

页码: 3444-3448

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335765

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thin‐film reactions of Al/Ti22W78(∼10 wt. % Ti) with and without ∼2 at. % Cu in the Al were investigated by transmission electron microscopy for vacuum annealing in the temperature range 300–600 °C. The reactions are nonuniform and the presence of Cu has little effect on the reaction kinetics. Reactions are grain boundary dominated and start at 400 °C with the formation of WAl12.

 

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