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Quantitative depth profiling resonance ionization mass spectrometry of GaAs/AlGaAs heterojunction bipolar transistors

 

作者: S. W. Downey,   A. B. Emerson,   R. F. Kopf,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 1  

页码: 385-387

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586363

 

出版商: American Vacuum Society

 

关键词: BIPOLAR TRANSISTORS;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;ALUMINIUM ARSENIDES;DEPTH PROFILES;HETEROJUNCTIONS;BERYLLIUM ADDITIONS;RESONANCE IONIZATION MASS SPECTROSCOPY;SPUTTERING;USES;SPATIAL RESOLUTION;QUASI−BINARY COMPOUNDS;GaAs;AlGaAs

 

数据来源: AIP

 

摘要:

Resonance ionization mass spectrometry of neutral atoms sputtered from GaAs/AlGaAs materials, used for heterojunction bipolar transistors (HBT), provides quantitative information about the dopant position near interfaces. The results help elucidate beryllium dopant migration because they are free of matrix effects common in secondary ionization mass spectrometry. HBT performance is shown to be associated with Be location. Quantitative analysis of Be is possible across the AlGaAs/GaAs interface without extensive use of standards. The magnitudes of dopant (Be) and matrix (Al) signals are related in proportion to their concentration.

 

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