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Monolithic two‐dimensional arrays of high‐power GaInAsP/InP surface‐emitting diode lasers

 

作者: J. N. Walpole,   Z. L. Liau,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 24  

页码: 1636-1638

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97025

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Two‐dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.

 

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