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Electron densities in InAs–AlSb quantum wells

 

作者: Chin‐An Chang,   L. L. Chang,   E. E. Mendez,   M. S. Christie,   L. Esaki,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 214-216

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582786

 

出版商: American Vacuum Society

 

关键词: superlattices;quantum well structures;electron density;electron mobility;indium arsenides;aluminium antimonides;gallium arsenides;thickness;etching;fabrication;molecular beam epitaxy;potential barrier;InAs;AlSb;GaSb

 

数据来源: AIP

 

摘要:

Both single wells and superlattices of InAs–AlSb have been grown by molecular beam epitaxy on GaAs substrates. The measured electron densities were found to depend on the processes used to define the sample geometry. While freshly cleaved samples show increasing electron densities and mobilities with the InAs layer thickness, etched samples give rise to much higher densities with no apparent dependence on the thickness. The discrepancies are believed to be related to the hygroscopic nature of AlSb.

 

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