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Thin film electroluminescent cell with the low‐threshold voltage ofn‐Ge‐ZnSe:Mn2+‐indium‐tin oxide structure

 

作者: H. Ohnishi,   Y. Hamakawa,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 5  

页码: 2937-2939

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327968

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A dc‐operated thin‐film electroluminescent cell is fabricated by the use of a heterojunction contact ofn‐Ge to ZnSe as an efficient electron injector. The typical display performance of the cell havingn‐Ge‐ZnSe:Mn2+‐ITO structure is 100 fL in brightness and 16 mlm/W in luminous efficiency at 24.1 V×10mA.

 

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