Undoped, Ge‐, and Sn‐doped GaAs1−xSbxgrown by liquid phase epitaxy have been investigated by means of photoluminescence. Four main peaks have been observed at 11 °K in the undoped samples. One of themK1at 1.513 eV in GaAs and the two,K2andK3, at 25 and 62 meV, respectively, below the band gap energy show an evolution withxparallel to the band gap variation. The remaining one at 1.31 eV does not change appreciably with the Sb content.