Electron beam lithography has been used to investigate the growth of GaAs wires in finely corrugated GaAs. Electron beam lithography was used to define 100 nm corrugations along the [110] and [11̄0]directions; anisotropic etching revealed grooves that were V‐shaped ([11̄0]) or dovetailed ([110]). Here, AlAs resharpens the groove profile during growth, provided the barrier thickness is not less than 30–40 nm. Also, GaAs exhibited an enhanced growth rate in both groove directions, with an increase of 60% over the nonpatterned growth rate for the [11̄0] direction. Growth in grooves along [11̄0]preserved the V shape of the groove, while [110] growth showed evidence of deposition masking and microvoiding.