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Origin of the defects observed after laser annealing of implanted silicon

 

作者: A. Mesli,   J. C. Muller,   D. Salles,   P. Siffert,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 2  

页码: 159-160

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92646

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Deep‐level transient spectroscopy experiments, performed on31P+‐implanted and laser‐annealed silicon, have shown that the defect concentration is considerably reduced when a conventional thermal annealing is performed before the laser treatment. A model is presented which explains the origin of the defects.

 

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