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A method to eliminate wetting during the homogenization of HgCdTe

 

作者: Ching‐Hua Su,   S. L. Lehoczky,   F. R. Szofran,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 10  

页码: 3777-3779

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337541

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Adhesion of HgCdTe samples to fused silica ampoule walls, or ‘‘wetting,’’ during the homogenization process was eliminated by adopting a slower heating rate. The idea is to decrease Cd activity in the sample so as to reduce the rate of reaction between Cd and the silica wall.

 

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