Nitrogen modification of hydrogenated amorphous carbon films
作者:
S. R. P. Silva,
J. Robertson,
G. A. J. Amaratunga,
B. Rafferty,
L. M. Brown,
J. Schwan,
D. F. Franceschini,
G. Mariotto,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 6
页码: 2626-2634
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.363927
出版商: AIP
数据来源: AIP
摘要:
The effect of nitrogen addition on the structural and electronic properties of hydrogenated amorphous carbon (a-C:H) films has been characterized in terms of its composition,sp3bonding fraction, infrared and Raman spectra, optical band gap, conductivity, and paramagnetic defect. The variation of conductivity with nitrogen content suggests that N acts as a weak donor, with the conductivity first decreasing and then increasing as the Fermi level moves up in the band gap. Compensated behavior is found at about 7 at. &percent; N, for the deposition conditions used here, where a number of properties show extreme behavior. The paramagnetic defect density and the Urbach tailwidth are each found to decrease with increasing N content. It is unusual to find alloy additions decreasing disorder in this manner. ©1997 American Institute of Physics.
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