Modification of Tribological Properties of Silicon by Boron Ion Implantation
作者:
B.K. Gupta,
Bharat Bhushan,
Jacques Chevallier,
期刊:
Tribology Transactions
(Taylor Available online 1994)
卷期:
Volume 37,
issue 3
页码: 601-607
ISSN:1040-2004
年代: 1994
DOI:10.1080/10402009408983335
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Friction and wear properties of silicon used in the fabrication of microelectromechanical systems (MEMS) are important for their long-term reliability. In the present study, the authors have implanted single-crystal and polycrystalline silicon wafers with boron ions to improve their mechanical and tribological properties. The authors have studied the effects of ion implantation on the crystallinity, microstructure, nanohardness, and friction and wear properties and have found that silicon remains crystalline after ion bombardment at doses up to 2 × 1017ions.cm−2but with a large amount of defects. The ion bombardment modifies elastic/plastic deformation characteristics and crack nucleation that occurs during indentation. There is a minor increase, ˜ 10-15 percent, in the nanohardness as a result of boron-ion implantation. Ion bombarded single-crystal silicon exhibits very low friction (0.05) and low wear factor (10−6mm3·N−1m−1) while slid against a 52100 steel ball. The coefficient of friction of bombarded silicon in dry air and dry nitrogen is even lower.Presented as a Society of Tribologists and Lubrication Engineers paper at the STLE/ASME Tribology Conference in New Orleans, Louisiana, October 24–27, 1993
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