Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition
作者:
K. A. Pacheco,
B. A. Ferguson,
C. Li,
S. John,
S. Banerjee,
C. B. Mullins,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 20
页码: 2951-2953
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114822
出版商: AIP
数据来源: AIP
摘要:
High (2 eV) and low kinetic energy supersonic jets of disilane as well as ultrahigh vacuum chemical vapor deposition have been employed to grow epitaxial silicon thin films on Si(100) wafers at temperatures ranging from 500 to 650 °C. The growth properties and film uniformity are compared in order to characterize the high energy technique. High translational energy disilane supersonic jets increase the efficiency of deposition by increasing the disilane reaction probability. The growth profiles from the high energy jet are sharply peaked due to a focusing of the precursor along the jet centerline. ©1995 American Institute of Physics.
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