In electron tunneling measurements into high‐Tcgetter‐sputtered Nb3Ge films, two energy gaps are clearly identified. The larger, 2&Dgr;=7.8 meV, we associate with well‐orderedA15 material. The smaller, 2&Dgr;∼1.0 meV, we suggest indicates the presence of very disordered material, because we cannot identify any known phase of the NbGe system with this low gap, and because a most interesting ’’phase’’ of Nb3Ge, with 2&Dgr;=0.86 meV andTc=3.06 K, was isolated by sputtering from the same target onto a cold (100−200 °C) substrate.