Ion‐bombardment‐enhanced plasma etching of tungsten with NF3/O2
作者:
W. M. Greene,
D. W. Hess,
W. G. Oldham,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 5
页码: 1570-1572
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584216
出版商: American Vacuum Society
关键词: ETCHING;TUNGSTEN;ION COLLISIONS;PHYSICAL RADIATION EFFECTS;ELECTRODES;TUNGSTEN FLUORIDES;MOLECULAR IONS;COLLISIONS;MOLECULE COLLISIONS;GLOW DISCHARGES;W
数据来源: AIP
摘要:
Ions and neutrals sampled from a NF3/O2etching plasma were observed by a quadrupole mass spectrometer and cylindrical mirror ion energy analyzer to investigate ion‐bombardment‐enhanced etching of tungsten. Dc biasing of a 13.56 MHz, 2.7 Pa, 1.24 W/cm2, 3/1 NF3/O2glow discharge raised the average ion energy bombarding the grounded electrode from 35 to 172 eV concurrent with an increase in the ion current by a factor of 3. Total conversion of NF3to N2and F2occurred under these conditions yielding a typical etch rate of polycrystalline tungsten of 150 nm/min. The primary ion observed was WF+5. The WF6etch product concentration was independent of ion energy, but correlated strongly with ion current. The results support a damage‐induced chemical reaction as the enhancement mechanism.
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