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Study of primary and secondary radiation defects formation and annealing inp-type silicon

 

作者: B.N. Mukashev,   L.G. Kolodin,   K.H. Nussupov,   A.V. Spitsyn,   V.S. Vavilov,  

 

期刊: Radiation Effects  （Taylor Available online 1980）
卷期: Volume 46, issue 1-2  

页码: 79-84

 

ISSN:0033-7579

 

年代: 1980

 

DOI:10.1080/00337578008209154

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The creation and annealing of defects introduced at 78 and 280 K by 2 MeV electron irradiation ofp-type silicon doped either by boron or by aluminium have been studied by using Hall effect, conductively and minority carrier diffusion length measurements.

 

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