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IrSi1.75a new semiconductor compound

 

作者: S. Petersson,   J. A. Reimer,   M. H. Brodsky,   D. R. Campbell,   F. d’Heurle,   B. Karlsson,   P. A. Tove,  

 

期刊: Journal of Applied Physics  （AIP Available online 1982）
卷期: Volume 53, issue 4  

页码: 3342-3343

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.330999

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon werep‐type with a charge carrier density of the order of 4×1017cm−3.

 

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