Formation of a Schottky barrier between eutectic Ga,In and thiophene oligomers
作者:
E. J. Lous,
P. W. M. Blom,
L. W. Molenkamp,
D. M. de Leeuw,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 8
页码: 3537-3542
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364990
出版商: AIP
数据来源: AIP
摘要:
The formation of a Schottky barrier between an eutectic (Ga,In) alloy and a highly doped thiophene oligomer is followed as a function of time using current density–voltage and capacitance–voltage measurements. Within 1 h, the diode characteristics change from almost nonrectifying, leaky behavior into a rectification ratio of104with a considerably reduced leakage current. Measurements and energy band diagram calculations show that the depletion width increases with time due to a decrease in the ionizable acceptor density of the semiconductor at the Schottky interface. This is probably caused by a chemical reaction between the in-diffusing metals and the doped oligomer. ©1997 American Institute of Physics.
点击下载:
PDF
(159KB)
返 回