Formation of titanium nitride layers by the nitridation of titanium in high‐pressure ammonium ambient
作者:
Tohru Hara,
Kouichi Tani,
Ken Inoue,
Shigeaki Nakamura,
Takeshi Murai,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 16
页码: 1660-1662
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104078
出版商: AIP
数据来源: AIP
摘要:
Nitridation of titanium layer is performed in a high‐pressure (5.9 kg/cm2) ammonium (NH3) ambient. Although the nitridation of titanium surface does not occur at 700 °C in an atmospheric pressure, it does occur at 650 °C in an ammonium pressure of 5.9 kg/cm2. Nitridation temperature can be lowered by 100–150 °C with an increase in ammonium pressure from 2.0 to 5.9 kg/cm2. Thickness of titanium nitride layer increased markedly with increasing ammonium pressure. This is due to the enhancement of the chemical reaction of titanium with ammonium gas by the increase of pressure. The thickness increases with an increase of nitridation temperature. The thickness of the titanium silicide layer formed by the silicidation reaction between titanium and the silicon wafer is reduced with the increase in ammonium pressure.
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