Photoemission studies of the band bending on MBE‐grown GaAs(001)
作者:
S. P. Svensson,
J. Kanski,
T. G. Andersson,
P.‐O. Nilsson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1984)
卷期:
Volume 2,
issue 2
页码: 235-239
ISSN:0734-211X
年代: 1984
DOI:10.1116/1.582792
出版商: American Vacuum Society
关键词: photoelectron spectroscopy;rheed;molecular beam epitaxy;barrier height;gallium arsenides;photoemission;valence bands;fermi level;band structure;chemical bonds;bond angle;surface analysis;surface structure;GaAs:Si
数据来源: AIP
摘要:
The band bending on GaAs(001) surfaces prepared by molecular beam epitaxy (MBE) have been studied forn‐ andp‐type materials. Surfaces withc(4×4),c(2×8), and (4×6) reconstruction ranging from As to Ga rich have been investigated. The surface symmetry was determined by reflection high energy electron diffraction (RHEED) and the position of the valence band maximum relative to the Fermi level was measured using angle resolved UV photoelectron spectroscopy (ARUPS) at normal emission. The position of the Fermi level relative to the valence band maximum was found to be ∼0.7 eV forn‐type and ∼0.5 eV forp‐type material, with a slightly increasing trend in going from Ga‐ to As‐rich surfaces. For the (4×6) reconstructedn‐type samples the growth termination method was found to have a significant influence on the band bending. The results obtained here are in very good agreement with previous measurements of the Al–GaAs(001) Schottky barrier height indicating that the electronic properties of this junction are determined by the properties of the semiconductor.
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