Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface
作者:
T. H. Windhorn,
W. D. Goodhue,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 24
页码: 1675-1677
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96802
出版商: AIP
数据来源: AIP
摘要:
Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge‐emitting double‐heterostructure diode lasers with a monolithic 45° deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while the other facet was cleaved. Diode laser/deflector devices with two etched laser facets could be used to fabricate monolithic two‐dimensional laser arrays.
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