Use of electron‐trapping region to reduce leakage currents and improve breakdown characteristics of MOS structures
作者:
D. J. DiMaria,
D. R. Young,
D. W. Ormond,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 10
页码: 680-682
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89502
出版商: AIP
数据来源: AIP
摘要:
A trapping layer of W (≈1014atoms/cm2) has been deposited between 70 A˚ of thermal silicon dioxide grown from a polycrystalline silicon substrate and 520 A˚ of deposited pyrolytic silicon dioxide in an MOS structure to reduce high leakage currents and low‐voltage breakdowns associated with asperities at the polycrystalline Si–thermal SiO2interface. MOS structures without the W layer but with the pyrolytic SiO2layer were also found to be effective. This improvement is ascertained to be due to localized electron trapping in the W or pyrolytic oxide layer at low average fields which reduces the locally high fields and therefore high dark currents associated with the asperities. At higher average fields uniform trapping is believed to be dominant. This uniform effect can also enhance the breakdown characteristics if the trapped charge is not detrapped by the applied field.
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