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Study of the recrystallization of Si after implantation using different temperature and energy sequences

 

作者: T. Bernstein,   I.W. Hall,   R. Kalish,  

 

期刊: Radiation Effects  （Taylor Available online 1980）
卷期: Volume 46, issue 1-2  

页码: 31-37

 

ISSN:0033-7579

 

年代: 1980

 

DOI:10.1080/00337578008209149

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Si implanted at 200°C is known not to form an amorphous layer and to anneal less well than Si implanted at room temperature. Reasons for this difference and the implications of gradual wafer heating during implantation were studied.

 

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