Using energy‐loss spectroscopy, energy dispersive x‐ray analysis, electron diffraction, and He+‐ion channeling the reaction of Fe during implantation into Si(111) has been investigated at various target temperatures and implantation doses. In samples implanted at 275 °C with 2.8×1017Fe+cm−2a continuous &agr;‐FeSi2layer accompanied by &agr;‐phase precipitates is formed. At 450 °C Fe agglomerates mostly in &agr;‐phase precipitates with only a few being &bgr;‐FeSi2. At 350 °C 1×1017Fe+cm−2produce precipitates electronically close to FeSi2but crystallographically poorly defined. At 4×1017Fe+cm−2a &bgr;‐FeSi2layer is formed at the surface and a 20‐nm‐thick &agr;‐FeSi2one followed by &agr;‐FeSi2precipitates deeper in the volume. Channeling reveals a minimum yield decreasing with dose indicating improved &agr;‐phase crystal quality. A sharp increase at 3.3×1017cm−2indicates an &agr;–&bgr; phase transition. FeSi has not been detected. Precipitates of well defined silicide phases are formed already during implantation. Dose and temperature have a profound influence on the phase formed.